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Monocrystalline silicon carbide nanoelectromechanical systems

Monocrystalline silicon carbide nanoelectromechanical systems on ResearchGate, the professional network for scientists. Monocrystalline silicon carbide nan

for the formation of monocrystalline silicon carbide (SiC)

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phase epitaxial growth of monocrystalline silicon carbide,

The cost of liquid phase epitaxial growth of a monocrystalline silicon carbide is reduced. A feed material b11/b is such that when a surface

for sublimation growing of silicon carbide monocrystals -

A reaction chamber (2) is enclosed by a gas-tight wall (20), made of silicon carbide obtained by a CVD process at least on the inside (21)

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Methods for manufacturing silicon carbide wafers having superior specifications for bow, warp, total thickness variation (TTV), local thickness variation (LTV

SEMI-INSULATING SILICON CARBIDE MONOCRYSTAL AND METHOD OF

A semi-insulating silicon carbide monocrystal and a method of growing the same are disclosed. The semi-insulating silicon carbide monocrystal comprises

Phase Epitaxial Growth Of Monocrystalline Silicon Carbide,

Provided is an inexpensive seed material for liquid phase epitaxial growth of silicon carbide. A seed material b12/b for liquid phase epitaxial

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Monocrystalline silicon carbide nanoelectromechanical systems

(2001) Monocrystalline silicon carbide nanoelectromechanical systems. Applied Physics Letters, 78 (2). pp. 162-164. ISSN 0003-6951. /p>

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Monocrystalline silicon carbide ingot, monocrystalline

Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×10

Monocrystalline silicon carbide nanoelectromechanical systems

Monocrystalline silicon carbide nanoelectromechanical systems Appl. Phys. Lett. 78, 162 (2001);

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Silicon Carbide Transparent Wafer Sic Wafer Double Side

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Epitaxial silicon carbide monocrystalline substrate and

Epitaxial silicon carbide monocrystalline substrate and method of production of same Inventors: Takashi Aigo (Tokyo, JP) Hiroshi

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METHOD OF PRODUCING A SILICON CARBIDE BULK SINGLE CRYSTAL

Patent application title: METHOD OF PRODUCING A SILICON CARBIDE BULK SINGLE CRYSTAL WITH THERMAL TREATMENT, AND LOW-IMPEDANCE MONOCRYSTALLINE SILICON CARBIDE

in Monocrystalline Alpha and Beta Silicon Carbide (PDF

Full-text (PDF) | The deposition of silicon carbide thin films and the associated technologies of impurity incorporation, etching, surface chemistry, and

SILICON CARBIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD

201512-A silicon carbide semiconductor device has a first-conductivity-type semiconductor layer having a lower impurity concentration and formed on

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Methods for manufacturing silicon carbide wafers having superior specifications for bow, warp, total thickness variation (TTV), local thickness variation (LTV

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PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE,

SEED MATERIAL FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE, AND METHOD FOR LIQUID PHASE EPITAXIAL GROWTH

Low micropipe 100 mm silicon carbide wafer - Cree, Inc.

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PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE,

SEED MATERIAL FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE, AND METHOD FOR LIQUID PHASE EPITAXIAL GROWTH